IDT71P72604S200BQ8
RoHS
/
Package /
Category Integrated Circuits (ICs) / Memory
Description
BALL 3-STATE 2006 Parallel (Memory Format) Memory 70C 1.5/1.81.8V 18874368bit 0.335A
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Standby Voltage-Min 1.7V
I/O Type SEPARATE
Access Time (Max) 0.45 ns
Memory Density 18874368 bit
Standby Current-Max 0.335A
Memory Width 36
Output Characteristics 3-STATE
Organization 512KX36
Supply Current-Max 0.95mA
Operating Mode SYNCHRONOUS
Memory Type QDR, RAM, SRAM
Interface Parallel
Power Supplies 1.5/1.81.8V
Qualification Status Not Qualified
Frequency 200MHz
Reach Compliance Code not_compliant
Terminal Pitch 1mm
Terminal Form BALL
Terminal Position BOTTOM
Technology CMOS
Subcategory SRAMs
Min Operating Temperature 0°C
Max Operating Temperature 70°C
Terminal Finish Tin/Lead (Sn63Pb37)
Number of Terminations 165
Moisture Sensitivity Level (MSL) 3
JESD-609 Code e0
Published 2006
Packaging Tape & Reel (TR)
Physical
Number of Pins 165
Surface Mount YES
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