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Category Integrated Circuits (ICs) / Memory
Description Synchronous BALL 3-STATE 2006 (Memory Format) Memory 70C 1.8V 18Mb 850mA
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Technical Details

Physical

Mount Surface Mount
Number of Pins 165

Technical

Published 2006
JESD-609 Code e1
Moisture Sensitivity Level (MSL) 3
Number of Terminations 165
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Additional Feature PIPELINED ARCHITECTURE
Subcategory SRAMs
Technology CMOS
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 260
Number of Functions 1
Supply Voltage 1.8V
Terminal Pitch 1mm
Frequency 167MHz
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 165
Qualification Status Not Qualified
Operating Supply Voltage 1.8V
Temperature Grade COMMERCIAL
Interface Parallel
Max Supply Voltage 1.9V
Min Supply Voltage 1.7V
Number of Ports 2
Nominal Supply Current 850mA
Memory Type QDR, RAM, SRAM
Access Time 500 ps
Output Characteristics 3-STATE
Memory Width 36
Address Bus Width 18b
Density 18 Mb
I/O Type SEPARATE
Sync/Async Synchronous
Word Size 36b

Dimensions

Length 15mm

Compliance

RoHS Status RoHS Compliant

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