IDT71P71804S200BQ8
RoHS
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Package /
Category Integrated Circuits (ICs) / Memory
Description
BALL 3-STATE 2007 Parallel (Memory Format) Memory 70C 1.7V 18874368bit 0.3A
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Dimensions
Width 13mm
Length 15mm
Height Seated (Max) 1.2mm
Technical
Standby Voltage-Min 1.7V
I/O Type COMMON
Access Time (Max) 0.45 ns
Memory Density 18874368 bit
Standby Current-Max 0.3A
Memory Width 18
Output Characteristics 3-STATE
Organization 1MX18
Supply Current-Max 0.55mA
Operating Mode SYNCHRONOUS
Memory Type DDR, RAM, SRAM
Interface Parallel
Supply Voltage-Min (Vsup) 1.7V
Temperature Grade COMMERCIAL
Power Supplies 1.5/1.81.8V
Supply Voltage-Max (Vsup) 1.9V
Qualification Status Not Qualified
Pin Count 165
Time@Peak Reflow Temperature-Max (s) 20
Frequency 200MHz
Reach Compliance Code not_compliant
Terminal Pitch 1mm
Supply Voltage 1.8V
Number of Functions 1
Peak Reflow Temperature (Cel) 225
Terminal Form BALL
Terminal Position BOTTOM
Technology CMOS
Subcategory SRAMs
HTS Code 8542.32.00.41
Min Operating Temperature 0°C
Max Operating Temperature 70°C
Terminal Finish Tin/Lead (Sn63Pb37)
ECCN Code 3A991.B.2.A
Number of Terminations 165
Moisture Sensitivity Level (MSL) 3
JESD-609 Code e0
Published 2007
Packaging Tape & Reel (TR)
Physical
Number of Pins 165
Surface Mount YES
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