IDT7164L25YI8
RoHS
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Package /
Category Integrated Circuits (ICs) / Memory
Description
J BEND 3-STATE 2009 Parallel (Memory Format) Memory 85C 4.5V 65536bit 0.00006A
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Technical Details
Physical
Surface Mount YES
Number of Pins 28
Technical
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e0
Moisture Sensitivity Level (MSL) 3
Number of Terminations 28
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn85Pb15)
Max Operating Temperature 85°C
Min Operating Temperature -40°C
HTS Code 8542.32.00.41
Subcategory SRAMs
Technology CMOS
Terminal Position DUAL
Terminal Form J BEND
Peak Reflow Temperature (Cel) 225
Number of Functions 1
Supply Voltage 5V
Terminal Pitch 1.27mm
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 28
Qualification Status Not Qualified
Supply Voltage-Max (Vsup) 5.5V
Power Supplies 5V
Temperature Grade INDUSTRIAL
Supply Voltage-Min (Vsup) 4.5V
Interface Parallel
Memory Type RAM, SRAM - Asynchronous
Supply Current-Max 0.15mA
Organization 8KX8
Output Characteristics 3-STATE
Memory Width 8
Standby Current-Max 0.00006A
Memory Density 65536 bit
Access Time (Max) 25 ns
I/O Type COMMON
Standby Voltage-Min 2V
Dimensions
Height Seated (Max) 3.556mm
Length 17.9324mm
Width 7.5184mm
Compliance
RoHS Status Non-RoHS Compliant
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