IDT71024S12TYI
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Category Integrated Circuits (ICs) / Memory
Description
J BEND 3-STATE 2010 Parallel (Memory Format) Memory 85C 4.5V 1048576bit 0.01A
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Technical Details
Physical
Surface Mount YES
Number of Pins 32
Technical
Published 2010
JESD-609 Code e0
Moisture Sensitivity Level (MSL) 3
Number of Terminations 32
ECCN Code 3A991.B.2.B
Terminal Finish Tin/Lead (Sn85Pb15)
Max Operating Temperature 85°C
Min Operating Temperature -40°C
Subcategory SRAMs
Technology CMOS
Terminal Position DUAL
Terminal Form J BEND
Peak Reflow Temperature (Cel) 225
Number of Functions 1
Supply Voltage 5V
Terminal Pitch 1.27mm
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 32
Qualification Status Not Qualified
Supply Voltage-Max (Vsup) 5.5V
Power Supplies 5V
Temperature Grade INDUSTRIAL
Supply Voltage-Min (Vsup) 4.5V
Interface Parallel
Memory Type RAM, SRAM - Asynchronous
Supply Current-Max 0.16mA
Organization 128KX8
Output Characteristics 3-STATE
Memory Width 8
Standby Current-Max 0.01A
Memory Density 1048576 bit
Access Time (Max) 12 ns
I/O Type COMMON
Standby Voltage-Min 4.5V
Dimensions
Height Seated (Max) 3.76mm
Length 20.96mm
Width 7.62mm
Compliance
RoHS Status Non-RoHS Compliant
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