IDT71016S20YI8
RoHS
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Package /
Category Integrated Circuits (ICs) / Memory
Description
J BEND 3-STATE 2010 Parallel (Memory Format) Memory 85C 4.5V 1048576bit 0.01A
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Dimensions
Width 10.16mm
Length 28.575mm
Height Seated (Max) 3.683mm
Technical
Standby Voltage-Min 4.5V
I/O Type COMMON
Access Time (Max) 20 ns
Memory Density 1048576 bit
Standby Current-Max 0.01A
Memory Width 16
Output Characteristics 3-STATE
Organization 64KX16
Supply Current-Max 0.17mA
Memory Type RAM, SRAM - Asynchronous
Interface Parallel
Supply Voltage-Min (Vsup) 4.5V
Temperature Grade INDUSTRIAL
Power Supplies 5V
Supply Voltage-Max (Vsup) 5.5V
Qualification Status Not Qualified
Pin Count 44
Time@Peak Reflow Temperature-Max (s) 30
Reach Compliance Code not_compliant
Terminal Pitch 1.27mm
Supply Voltage 5V
Number of Functions 1
Peak Reflow Temperature (Cel) 225
Terminal Form J BEND
Terminal Position DUAL
Technology CMOS
Subcategory SRAMs
HTS Code 8542.32.00.41
Min Operating Temperature -40°C
Max Operating Temperature 85°C
Terminal Finish Tin/Lead (Sn85Pb15)
ECCN Code 3A991.B.2.B
Number of Terminations 44
Moisture Sensitivity Level (MSL) 3
Pbfree Code no
JESD-609 Code e0
Published 2010
Packaging Tape & Reel (TR)
Physical
Number of Pins 44
Surface Mount YES
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