IDT6116LA35TPGI
RoHS
/
Package DIP
Category Integrated Circuits (ICs) / Memory
Description
THROUGH-HOLE 3-STATE 2008 Parallel (Memory Format) Memory 85C 4.5V 16384bit 0.00002A
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Technical Details
Physical
Package / Case DIP
Surface Mount NO
Technical
Published 2008
JESD-609 Code e3
Number of Terminations 24
ECCN Code EAR99
Terminal Finish MATTE TIN
Max Operating Temperature 85°C
Min Operating Temperature -40°C
HTS Code 8542.32.00.41
Subcategory SRAMs
Technology CMOS
Terminal Position DUAL
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) 260
Number of Functions 1
Supply Voltage 5V
Terminal Pitch 2.54mm
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 24
Qualification Status Not Qualified
Supply Voltage-Max (Vsup) 5.5V
Power Supplies 5V
Temperature Grade INDUSTRIAL
Supply Voltage-Min (Vsup) 4.5V
Interface Parallel
Memory Type RAM, SRAM - Asynchronous
Supply Current-Max 0.095mA
Organization 2KX8
Output Characteristics 3-STATE
Memory Width 8
Standby Current-Max 0.00002A
Memory Density 16384 bit
Access Time (Max) 35 ns
I/O Type COMMON
Standby Voltage-Min 2V
Dimensions
Height Seated (Max) 4.191mm
Length 31.75mm
Width 7.62mm
Compliance
RoHS Status RoHS Compliant
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