IDT6116LA35TP
RoHS
/
Package DIP
Category Integrated Circuits (ICs) / Memory
Description
THROUGH-HOLE 3-STATE 2008 Parallel (Memory Format) Memory 70C 4.5V 16384bit 0.00002A
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Dimensions
Width 7.62mm
Length 31.75mm
Height Seated (Max) 4.191mm
Technical
Output Enable YES
Standby Voltage-Min 2V
I/O Type COMMON
Access Time (Max) 35 ns
Memory Density 16384 bit
Standby Current-Max 0.00002A
Memory Width 8
Output Characteristics 3-STATE
Organization 2KX8
Supply Current-Max 0.095mA
Memory Type RAM, SRAM - Asynchronous
Number of Ports 1
Interface Parallel
Supply Voltage-Min (Vsup) 4.5V
Temperature Grade COMMERCIAL
Power Supplies 5V
Supply Voltage-Max (Vsup) 5.5V
Qualification Status Not Qualified
Pin Count 24
Time@Peak Reflow Temperature-Max (s) 30
Reach Compliance Code not_compliant
Terminal Pitch 2.54mm
Supply Voltage 5V
Number of Functions 1
Peak Reflow Temperature (Cel) 225
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Technology CMOS
Subcategory SRAMs
HTS Code 8542.32.00.41
Min Operating Temperature 0°C
Max Operating Temperature 70°C
Terminal Finish Tin/Lead (Sn85Pb15)
ECCN Code EAR99
Number of Terminations 24
JESD-609 Code e0
Published 2008
Physical
Surface Mount NO
Package / Case DIP
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