71V67903S75BQGI
RoHS
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Package /
Category Integrated Circuits (ICs) / Memory
Description
Synchronous BALL 3-STATE 2004 (Memory Format) Memory 85C 3.465V 9Mb 285mA
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Dimensions
Thickness 1.2mm
Width 13mm
Length 15mm
Technical
Word Size 18b
Sync/Async Synchronous
I/O Type COMMON
Standby Current-Max 0.07A
Density 9 Mb
Address Bus Width 19b
Output Characteristics 3-STATE
Access Time 7.5 ns
Memory Type RAM, SRAM
Nominal Supply Current 285mA
Number of Ports 1
Min Supply Voltage 3.135V
Max Supply Voltage 3.465V
Interface Parallel
Temperature Grade INDUSTRIAL
Operating Supply Voltage 3.3V
Pin Count 165
Time@Peak Reflow Temperature-Max (s) 30
Frequency 117MHz
Supply Voltage 3.3V
Number of Functions 1
Peak Reflow Temperature (Cel) 260
Terminal Form BALL
Terminal Position BOTTOM
Technology CMOS
Subcategory SRAMs
Additional Feature FLOW-THROUGH ARCHITECTURE
Min Operating Temperature -40°C
Max Operating Temperature 85°C
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 165
Moisture Sensitivity Level (MSL) 3
Pbfree Code yes
JESD-609 Code e1
Published 2004
Packaging Bulk
Physical
Number of Pins 165
Mount Surface Mount
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