71V67603S133BQG8
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Package /
Category Integrated Circuits (ICs) / Memory
Description
Active BALL 3-STATE 2009 (Memory Format) Memory 70C 3.465V 9Mb 0.05A
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Technical Details
Technical
Organization 256KX36
Output Characteristics 3-STATE
Address Bus Width 18b
Density 9 Mb
Standby Current-Max 0.05A
I/O Type COMMON
Access Time 4.2 ns
Frequency (Max) 133MHz
Supply Current-Max 0.26mA
Memory Type RAM, SDR, SRAM
Number of Ports 1
Memory Size 1.1MB
Min Supply Voltage 3.135V
Max Supply Voltage 3.465V
Interface Parallel
Temperature Grade COMMERCIAL
Operating Supply Voltage 3.3V
Pin Count 165
Time@Peak Reflow Temperature-Max (s) 30
Frequency 133MHz
Supply Voltage 3.3V
Number of Functions 1
Peak Reflow Temperature (Cel) 260
Terminal Form BALL
Terminal Position BOTTOM
Technology CMOS
Subcategory SRAMs
Additional Feature PIPELINED ARCHITECTURE
Min Operating Temperature 0°C
Max Operating Temperature 70°C
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 165
Moisture Sensitivity Level (MSL) 3
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Published 2009
Dimensions
Length 15mm
Width 13mm
Thickness 1.2mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Physical
Number of Pins 165
Surface Mount YES
Supply Chain
Factory Lead Time 12 Weeks
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