71V67603S133BQ
RoHS
/
Package /
Category Integrated Circuits (ICs) / Memory
Description
Synchronous Active BALL 3-STATE (Memory Format) Memory 70C 3.465V 9Mb 260mA
PDF
/
Inventory: 1457
Minimum: /
The more specific your information, the faster response you will get.
Please complete the following form with the details of your request part and
contact information to get a quote.
Quotation Consultation
Technical Details
Compliance
Lead Free Contains Lead
RoHS Status RoHS Compliant
Radiation Hardening No
Dimensions
Thickness 1.2mm
Width 13mm
Length 15mm
Technical
Word Size 36b
Sync/Async Synchronous
I/O Type COMMON
Standby Current-Max 0.05A
Density 9 Mb
Address Bus Width 18b
Output Characteristics 3-STATE
Organization 256KX36
Access Time 4.2 ns
Frequency (Max) 133MHz
Memory Type RAM, SDR, SRAM
Nominal Supply Current 260mA
Number of Ports 1
Memory Size 1.1MB
Min Supply Voltage 3.135V
Max Supply Voltage 3.465V
Interface Parallel
Temperature Grade COMMERCIAL
Operating Supply Voltage 3.3V
Pin Count 165
Time@Peak Reflow Temperature-Max (s) 20
Frequency 133MHz
Supply Voltage 3.3V
Number of Functions 1
Peak Reflow Temperature (Cel) 225
Terminal Form BALL
Terminal Position BOTTOM
Technology CMOS
Subcategory SRAMs
Additional Feature PIPELINED ARCHITECTURE
Min Operating Temperature 0°C
Max Operating Temperature 70°C
Terminal Finish Tin/Lead (Sn63Pb37)
Number of Terminations 165
Moisture Sensitivity Level (MSL) 3
Part Status Active
Pbfree Code no
JESD-609 Code e0
Published 2009
Physical
Number of Pins 165
Mount Surface Mount
Supply Chain
Factory Lead Time 12 Weeks
Recommended For You
71V67603S133BQ+price,71V67603S133BQ+datasheet,71V67603S133BQ+in stock,buy+71V67603S133BQ,finder+71V67603S133BQ,71V67603S133BQ+tutorials,71V67603S133BQ+download