71V65903S80BQG
RoHS
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Package /
Category Integrated Circuits (ICs) / Memory
Description
Synchronous Active BALL 2005 (Memory Format) Memory 70C 3.465V 9Mb 250mA
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Dimensions
Thickness 1.2mm
Width 13mm
Length 15mm
Technical
Word Size 18b
Sync/Async Synchronous
Density 9 Mb
Address Bus Width 19b
Access Time 8 ns
Memory Type RAM, SDR, SRAM
Nominal Supply Current 250mA
Number of Ports 1
Memory Size 1.1MB
Min Supply Voltage 3.135V
Max Supply Voltage 3.465V
Interface Parallel
Temperature Grade COMMERCIAL
Operating Supply Voltage 3.3V
Pin Count 165
Time@Peak Reflow Temperature-Max (s) 30
Frequency 95MHz
Supply Voltage 3.3V
Number of Functions 1
Peak Reflow Temperature (Cel) 260
Terminal Form BALL
Terminal Position BOTTOM
Technology CMOS
Additional Feature FLOW-THROUGH
Min Operating Temperature 0°C
Max Operating Temperature 70°C
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 165
Moisture Sensitivity Level (MSL) 3
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Published 2005
Physical
Number of Pins 165
Mount Surface Mount
Supply Chain
Factory Lead Time 7 Weeks
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