71V65803S100BQG8
RoHS
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Package /
Category Integrated Circuits (ICs) / Memory
Description
Active BALL 3-STATE 2005 (Memory Format) Memory 70C 3.3V 9Mb 0.04A
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Technical Details
Technical
I/O Type COMMON
Access Time (Max) 5 ns
Standby Current-Max 0.04A
Density 9 Mb
Address Bus Width 19b
Output Characteristics 3-STATE
Supply Current-Max 0.25mA
Memory Type RAM, SRAM
Number of Ports 1
Interface Parallel
Temperature Grade COMMERCIAL
Supply Voltage-Max (Vsup) 3.465V
Operating Supply Voltage 3.3V
Pin Count 165
Time@Peak Reflow Temperature-Max (s) 30
Frequency 100MHz
Supply Voltage 3.3V
Number of Functions 1
Peak Reflow Temperature (Cel) 260
Terminal Form BALL
Terminal Position BOTTOM
Technology CMOS
Subcategory SRAMs
Additional Feature PIPELINED ARCHITECTURE
Min Operating Temperature 0°C
Max Operating Temperature 70°C
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 165
Moisture Sensitivity Level (MSL) 3
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Published 2005
Packaging Tape & Reel
Dimensions
Length 15mm
Width 13mm
Thickness 1.2mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Physical
Number of Pins 165
Surface Mount YES
Supply Chain
Factory Lead Time 7 Weeks
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