71V65603S150BQ
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Category Integrated Circuits (ICs) / Memory
Description
Synchronous Active BALL 3-STATE (Memory Format) Memory 70C 3.465V 9Mb 325mA
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Number of Pins 165
Technical
Published 2007
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 3
Number of Terminations 165
Terminal Finish Tin/Lead (Sn63Pb37)
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Additional Feature BURST COUNTER
Subcategory SRAMs
Technology CMOS
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 225
Number of Functions 1
Supply Voltage 3.3V
Frequency 150MHz
Time@Peak Reflow Temperature-Max (s) 20
Pin Count 165
Operating Supply Voltage 3.3V
Temperature Grade COMMERCIAL
Interface Parallel
Max Supply Voltage 3.465V
Min Supply Voltage 3.135V
Memory Size 1.1MB
Number of Ports 1
Nominal Supply Current 325mA
Memory Type RAM, SDR, SRAM
Frequency (Max) 150MHz
Access Time 6.7 ns
Organization 256KX36
Output Characteristics 3-STATE
Address Bus Width 18b
Density 9 Mb
Standby Current-Max 0.04A
I/O Type COMMON
Sync/Async Synchronous
Word Size 36b
Dimensions
Length 15mm
Width 13mm
Thickness 1.2mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Contains Lead
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