71V65603S100BQG
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Category Integrated Circuits (ICs) / Memory
Description
Active BALL 3-STATE 2005 (Memory Format) Memory 70C 3.465V 9Mb 0.04A
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Surface Mount YES
Number of Pins 165
Technical
Published 2005
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3
Number of Terminations 165
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Additional Feature BURST COUNTER
Subcategory SRAMs
Technology CMOS
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 260
Number of Functions 1
Supply Voltage 3.3V
Frequency 100MHz
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 165
Operating Supply Voltage 3.3V
Temperature Grade COMMERCIAL
Interface Parallel
Max Supply Voltage 3.465V
Min Supply Voltage 3.135V
Memory Size 1.1MB
Number of Ports 1
Memory Type RAM, SDR, SRAM
Supply Current-Max 0.25mA
Frequency (Max) 100MHz
Access Time 10 ns
Organization 256KX36
Output Characteristics 3-STATE
Address Bus Width 18b
Density 9 Mb
Standby Current-Max 0.04A
I/O Type COMMON
Dimensions
Length 15mm
Width 13mm
Thickness 1.2mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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