71V424S10YG8
RoHS
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Package /
Category Integrated Circuits (ICs) / Memory
Description
Asynchronous Active J BEND 3-STATE (Memory Format) Memory 70C 3.6V 4Mb 180mA
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Buying Options
Total Price: USD $6.72
Unit Price: USD $6.7232
≥1 USD $6.7232
≥10 USD $6.18816
≥100 USD $6.058976
≥500 USD $6.037856
≥1000 USD $5.417808
≥3000 USD $5.254022
Inventory: 1097
Minimum: 1
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Technical Details
Technical
Number of Functions 1
Peak Reflow Temperature (Cel) 260
Terminal Form J BEND
Terminal Position DUAL
Technology CMOS
Subcategory SRAMs
Min Operating Temperature 0°C
Max Operating Temperature 70°C
Terminal Finish Matte Tin (Sn) - annealed
Number of Terminations 36
Moisture Sensitivity Level (MSL) 3
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2009
Packaging Tape & Reel
Standby Voltage-Min 3V
Word Size 8b
Sync/Async Asynchronous
I/O Type COMMON
Standby Current-Max 0.02A
Density 4 Mb
Address Bus Width 19b
Output Characteristics 3-STATE
Access Time 10 ns
Memory Type RAM, SDR, SRAM - Asynchronous
Nominal Supply Current 180mA
Number of Ports 1
Memory Size 512kB
Min Supply Voltage 3V
Max Supply Voltage 3.6V
Interface Parallel
Temperature Grade COMMERCIAL
Operating Supply Voltage 3.3V
Pin Count 36
Supply Voltage 3.3V
Physical
Number of Pins 36
Mount Surface Mount
Supply Chain
Factory Lead Time 12 Weeks
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Dimensions
Thickness 2.2mm
Width 10.2mm
Length 23.4mm
Height Seated (Max) 3.683mm
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