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Category Integrated Circuits (ICs) / Memory
Description Asynchronous Active J BEND 3-STATE (Memory Format) Memory 85C 3.6V 4Mb 10.2mm
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Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Number of Pins 36

Technical

Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3
Number of Terminations 36
Terminal Finish Matte Tin (Sn) - annealed
Max Operating Temperature 85°C
Min Operating Temperature -40°C
Subcategory SRAMs
Technology CMOS
Terminal Position DUAL
Terminal Form J BEND
Peak Reflow Temperature (Cel) 260
Number of Functions 1
Supply Voltage 3.3V
Pin Count 36
Operating Supply Voltage 3.3V
Temperature Grade INDUSTRIAL
Interface Parallel
Max Supply Voltage 3.6V
Min Supply Voltage 3V
Memory Size 512kB
Number of Ports 1
Memory Type RAM, SDR, SRAM - Asynchronous
Access Time 10 ns
Output Characteristics 3-STATE
Address Bus Width 19b
Standby Voltage-Min 3V
Word Size 8b
Sync/Async Asynchronous
I/O Type COMMON
Density 4 Mb

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No

Dimensions

Thickness 2.2mm
Width 10.2mm
Length 23.4mm

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