71V416S15BEI8
RoHS
/
Package TFBGA
Category Integrated Circuits (ICs) / Memory
Description
Asynchronous Active BALL 3-STATE (Memory Format) Memory 85C 3.6V 4Mb 170mA
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status RoHS Compliant
Radiation Hardening No
Dimensions
Thickness 1.2mm
Width 9mm
Length 9mm
Technical
Standby Voltage-Min 3V
Word Size 16b
Sync/Async Asynchronous
I/O Type COMMON
Standby Current-Max 0.02A
Density 4 Mb
Address Bus Width 18b
Output Characteristics 3-STATE
Access Time 15 ns
Memory Type RAM, SDR, SRAM - Asynchronous
Nominal Supply Current 170mA
Number of Ports 1
Memory Size 512kB
Min Supply Voltage 3V
Max Supply Voltage 3.6V
Interface Parallel
Temperature Grade INDUSTRIAL
Operating Supply Voltage 3.3V
Pin Count 48
Time@Peak Reflow Temperature-Max (s) 20
Terminal Pitch 0.75mm
Supply Voltage 3.3V
Number of Functions 1
Peak Reflow Temperature (Cel) 225
Terminal Form BALL
Terminal Position BOTTOM
Technology CMOS
Subcategory SRAMs
Min Operating Temperature -40°C
Max Operating Temperature 85°C
Terminal Finish Tin/Lead (Sn63Pb37)
Number of Terminations 48
Moisture Sensitivity Level (MSL) 4
Part Status Active
Pbfree Code no
JESD-609 Code e0
Published 2014
Physical
Number of Pins 48
Package / Case TFBGA
Mount Surface Mount
Supply Chain
Factory Lead Time 12 Weeks
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