71V416S10YG8
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Category Integrated Circuits (ICs) / Memory
Description
Asynchronous Active J BEND 3-STATE (Memory Format) Memory 70C 3.6V 4Mb 200mA
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Number of Pins 44
Technical
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3
Number of Terminations 44
Terminal Finish MATTE TIN
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Subcategory SRAMs
Technology CMOS
Terminal Position DUAL
Terminal Form J BEND
Peak Reflow Temperature (Cel) 260
Number of Functions 1
Supply Voltage 3.3V
Pin Count 44
Operating Supply Voltage 3.3V
Temperature Grade COMMERCIAL
Interface Parallel
Max Supply Voltage 3.6V
Min Supply Voltage 3V
Memory Size 512kB
Number of Ports 1
Nominal Supply Current 200mA
Memory Type RAM, SDR, SRAM - Asynchronous
Access Time 10 ns
Output Characteristics 3-STATE
Address Bus Width 18b
Density 4 Mb
Standby Current-Max 0.02A
I/O Type COMMON
Sync/Async Asynchronous
Word Size 16b
Standby Voltage-Min 3V
Dimensions
Height Seated (Max) 3.683mm
Length 28.6mm
Width 10.2mm
Thickness 2.9mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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