71V416S10BEG8
RoHS
/
Package TFBGA
Category Integrated Circuits (ICs) / Memory
Description
Active BALL 3-STATE 2014 (Memory Format) Memory 70C 3.6V 4Mb 0.02A
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Dimensions
Thickness 1.2mm
Width 9mm
Length 9mm
Technical
Standby Voltage-Min 3V
I/O Type COMMON
Standby Current-Max 0.02A
Density 4 Mb
Address Bus Width 18b
Output Characteristics 3-STATE
Access Time 10 ns
Supply Current-Max 0.2mA
Memory Type RAM, SDR, SRAM - Asynchronous
Number of Ports 1
Memory Size 512kB
Min Supply Voltage 3V
Max Supply Voltage 3.6V
Interface Parallel
Temperature Grade INDUSTRIAL
Operating Supply Voltage 3.3V
Pin Count 48
Terminal Pitch 0.75mm
Supply Voltage 3.3V
Number of Functions 1
Peak Reflow Temperature (Cel) 260
Terminal Form BALL
Terminal Position BOTTOM
Technology CMOS
Subcategory SRAMs
Min Operating Temperature 0°C
Max Operating Temperature 70°C
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 48
Moisture Sensitivity Level (MSL) 3
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Published 2014
Physical
Number of Pins 48
Surface Mount YES
Package / Case TFBGA
Supply Chain
Factory Lead Time 12 Weeks
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