71V416S10BE
RoHS
/
Package TFBGA
Category Integrated Circuits (ICs) / Memory
Description
Asynchronous Active BALL 3-STATE (Memory Format) Memory 70C 3.6V 4Mb 200mA
PDF
/
Buying Options
Total Price: USD $6.2
Unit Price: USD $6.204
≥1 USD $6.204
Inventory: 462
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Package / Case TFBGA
Number of Pins 48
Technical
Published 2013
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 4
Number of Terminations 48
Terminal Finish Tin/Lead (Sn63Pb37)
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Subcategory SRAMs
Technology CMOS
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 225
Number of Functions 1
Supply Voltage 3.3V
Terminal Pitch 0.75mm
Time@Peak Reflow Temperature-Max (s) 20
Pin Count 48
Operating Supply Voltage 3.3V
Temperature Grade INDUSTRIAL
Interface Parallel
Max Supply Voltage 3.6V
Min Supply Voltage 3V
Memory Size 512kB
Number of Ports 1
Nominal Supply Current 200mA
Memory Type RAM, SDR, SRAM - Asynchronous
Access Time 10 ns
Output Characteristics 3-STATE
Address Bus Width 18b
Density 4 Mb
Standby Current-Max 0.02A
I/O Type COMMON
Sync/Async Asynchronous
Word Size 16b
Standby Voltage-Min 3V
Dimensions
Length 9mm
Width 9mm
Thickness 1.2mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Contains Lead
Recommended For You
71V416S10BE+price,71V416S10BE+datasheet,71V416S10BE+in stock,buy+71V416S10BE,finder+71V416S10BE,71V416S10BE+tutorials,71V416S10BE+download