71V416L15BEGI8
RoHS
/
Package TFBGA
Category Integrated Circuits (ICs) / Memory
Description
Asynchronous Active BALL 3-STATE (Memory Format) Memory 85C 3.6V 4Mb 160mA
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Package / Case TFBGA
Number of Pins 48
Technical
Published 2014
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3
Number of Terminations 48
Terminal Finish TIN SILVER COPPER
Standby Voltage-Min 3V
Word Size 16b
Sync/Async Asynchronous
I/O Type COMMON
Density 4 Mb
Address Bus Width 18b
Output Characteristics 3-STATE
Access Time 15 ns
Memory Type RAM, SDR, SRAM - Asynchronous
Nominal Supply Current 160mA
Number of Ports 1
Memory Size 512kB
Min Supply Voltage 3V
Max Supply Voltage 3.6V
Interface Parallel
Temperature Grade INDUSTRIAL
Operating Supply Voltage 3.3V
Pin Count 48
Terminal Pitch 0.75mm
Supply Voltage 3.3V
Number of Functions 1
Peak Reflow Temperature (Cel) 260
Terminal Form BALL
Terminal Position BOTTOM
Technology CMOS
Subcategory SRAMs
Min Operating Temperature -40°C
Max Operating Temperature 85°C
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Dimensions
Thickness 1.2mm
Width 9mm
Length 9mm
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