71V416L12YG
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Category Integrated Circuits (ICs) / Memory
Description
Asynchronous Active J BEND 3-STATE (Memory Format) Memory 70C 3.6V 4Mb 170mA
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Number of Pins 44
Technical
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3
Number of Terminations 44
Terminal Finish Matte Tin (Sn) - annealed
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Subcategory SRAMs
Technology CMOS
Terminal Position DUAL
Terminal Form J BEND
Peak Reflow Temperature (Cel) 260
Number of Functions 1
Supply Voltage 3.3V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 44
Qualification Status Not Qualified
Operating Supply Voltage 3.3V
Temperature Grade INDUSTRIAL
Interface Parallel
Max Supply Voltage 3.6V
Min Supply Voltage 3V
Memory Size 512kB
Number of Ports 1
Nominal Supply Current 170mA
Memory Type RAM, SDR, SRAM - Asynchronous
Access Time 12 ns
Output Characteristics 3-STATE
Address Bus Width 18b
Density 4 Mb
I/O Type COMMON
Sync/Async Asynchronous
Word Size 16b
Standby Voltage-Min 3V
Dimensions
Length 28.6mm
Width 10.2mm
Thickness 2.9mm
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
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