71V416L10YG
RoHS
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Package /
Category Integrated Circuits (ICs) / Memory
Description
Asynchronous Active J BEND 3-STATE (Memory Format) Memory 70C 3.6V 4Mb 180mA
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Dimensions
Thickness 2.9mm
Width 10.2mm
Length 28.6mm
Height Seated (Max) 3.683mm
Technical
Standby Voltage-Min 3V
Word Size 16b
Sync/Async Asynchronous
I/O Type COMMON
Density 4 Mb
Address Bus Width 18b
Output Characteristics 3-STATE
Access Time 10 ns
Memory Type RAM, SDR, SRAM - Asynchronous
Nominal Supply Current 180mA
Number of Ports 1
Memory Size 512kB
Min Supply Voltage 3V
Max Supply Voltage 3.6V
Interface Parallel
Temperature Grade COMMERCIAL
Operating Supply Voltage 3.3V
Pin Count 44
Supply Voltage 3.3V
Number of Functions 1
Peak Reflow Temperature (Cel) 260
Terminal Form J BEND
Terminal Position DUAL
Technology CMOS
Subcategory SRAMs
Min Operating Temperature 0°C
Max Operating Temperature 70°C
Terminal Finish Matte Tin (Sn) - annealed
Number of Terminations 44
Moisture Sensitivity Level (MSL) 3
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2013
Physical
Number of Pins 44
Mount Surface Mount
Supply Chain
Factory Lead Time 12 Weeks
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