71V3559S80BQ
RoHS
/
Package /
Category Integrated Circuits (ICs) / Memory
Description
Synchronous Active BALL 3-STATE (Memory Format) Memory 70C 3.465V 4.5Mb 250mA
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status RoHS Compliant
Radiation Hardening No
Dimensions
Thickness 1.2mm
Width 13mm
Length 15mm
Technical
Word Size 18b
Sync/Async Synchronous
I/O Type COMMON
Standby Current-Max 0.04A
Density 4.5 Mb
Address Bus Width 18b
Output Characteristics 3-STATE
Access Time 8 ns
Frequency (Max) 100MHz
Memory Type RAM, SDR, SRAM
Nominal Supply Current 250mA
Number of Ports 1
Memory Size 512kB
Min Supply Voltage 3.135V
Max Supply Voltage 3.465V
Interface Parallel
Temperature Grade COMMERCIAL
Operating Supply Voltage 3.3V
Pin Count 165
Time@Peak Reflow Temperature-Max (s) 20
Frequency 95MHz
Supply Voltage 3.3V
Peak Reflow Temperature (Cel) 225
Terminal Form BALL
Terminal Position BOTTOM
Technology CMOS
Subcategory SRAMs
Min Operating Temperature 0°C
Max Operating Temperature 70°C
Terminal Finish Tin/Lead (Sn63Pb37)
Number of Terminations 165
Moisture Sensitivity Level (MSL) 3
Part Status Active
Pbfree Code no
JESD-609 Code e0
Published 2009
Physical
Number of Pins 165
Mount Surface Mount
Supply Chain
Factory Lead Time 11 Weeks
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