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Category Integrated Circuits (ICs) / Memory
Description Active BALL 3-STATE 2006 (Memory Format) Memory 85C 3.3V 4.5Mb 0.045A
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Technical Details

Supply Chain

Factory Lead Time 11 Weeks

Physical

Surface Mount YES
Number of Pins 165

Technical

Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3
Number of Terminations 165
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Operating Temperature 85°C
Min Operating Temperature -40°C
Subcategory SRAMs
Technology CMOS
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 260
Number of Functions 1
Supply Voltage 3.3V
Frequency 166MHz
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 165
Operating Supply Voltage 3.3V
Supply Voltage-Max (Vsup) 3.465V
Temperature Grade INDUSTRIAL
Interface Parallel
Number of Ports 1
Memory Type RAM, SRAM
Supply Current-Max 0.36mA
Output Characteristics 3-STATE
Address Bus Width 18b
Density 4.5 Mb
Standby Current-Max 0.045A
Access Time (Max) 3.5 ns
I/O Type COMMON

Dimensions

Length 15mm
Width 13mm
Thickness 1.2mm

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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