71V25761S200BG8
RoHS
/
Package BGA
Category Integrated Circuits (ICs) / Memory
Description
Synchronous BALL 3-STATE 2009 (Memory Format) Memory 70C 3.465V 4.5Mb 360mA
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status RoHS Compliant
Radiation Hardening No
Dimensions
Thickness 2.15mm
Width 22mm
Length 14mm
Height Seated (Max) 2.36mm
Technical
Word Size 36b
Sync/Async Synchronous
I/O Type COMMON
Standby Current-Max 0.03A
Density 4.5 Mb
Address Bus Width 17b
Output Characteristics 3-STATE
Access Time 3.1 ns
Memory Type RAM, SRAM
Nominal Supply Current 360mA
Number of Ports 1
Min Supply Voltage 3.135V
Max Supply Voltage 3.465V
Interface Parallel
Temperature Grade COMMERCIAL
Operating Supply Voltage 3.3V
Pin Count 119
Time@Peak Reflow Temperature-Max (s) 20
Frequency 200MHz
Supply Voltage 3.3V
Number of Functions 1
Peak Reflow Temperature (Cel) 225
Terminal Form BALL
Terminal Position BOTTOM
Technology CMOS
Subcategory SRAMs
Additional Feature PIPELINED ARCHITECTURE
Min Operating Temperature 0°C
Max Operating Temperature 70°C
Terminal Finish Tin/Lead (Sn63Pb37)
Number of Terminations 119
Moisture Sensitivity Level (MSL) 3
Pbfree Code no
JESD-609 Code e0
Published 2009
Packaging Tape & Reel
Physical
Number of Pins 119
Package / Case BGA
Mount Surface Mount
Supply Chain
Factory Lead Time 7 Weeks
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