71T75602S100BGGI8
RoHS
/
Package BGA
Category Integrated Circuits (ICs) / Memory
Description
Synchronous Active BALL 3-STATE (Memory Format) Memory 85C 2.625V 18Mb 195mA
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Surface Mount
Package / Case BGA
Number of Pins 119
Technical
Published 2012
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3
Number of Terminations 119
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Operating Temperature 85°C
Min Operating Temperature -40°C
Additional Feature PIPELINED ARCHITECTURE
Subcategory SRAMs
Technology CMOS
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 260
Number of Functions 1
Supply Voltage 2.5V
Frequency 100MHz
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 119
Operating Supply Voltage 2.5V
Temperature Grade INDUSTRIAL
Interface Parallel
Max Supply Voltage 2.625V
Min Supply Voltage 2.375V
Memory Size 2.3MB
Number of Ports 1
Nominal Supply Current 195mA
Memory Type RAM, SDR, SRAM
Frequency (Max) 100MHz
Access Time 5 ns
Output Characteristics 3-STATE
Address Bus Width 19b
Density 18 Mb
Standby Current-Max 0.06A
I/O Type COMMON
Sync/Async Synchronous
Word Size 36b
Standby Voltage-Min 2.38V
Dimensions
Height Seated (Max) 2.36mm
Length 14mm
Width 22mm
Thickness 2.15mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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