7164S25DB
RoHS
/
Package CDIP
Category Integrated Circuits (ICs) / Memory
Description
Active THROUGH-HOLE 3-STATE 2011 (Memory Format) Memory 125C 5V 64kb 0.02A
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Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Physical
Package / Case CDIP
Surface Mount NO
Number of Pins 28
Technical
Packaging Bulk
Published 2011
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1
Number of Terminations 28
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 125°C
Min Operating Temperature -55°C
Subcategory SRAMs
Technology CMOS
Terminal Position DUAL
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) 240
Number of Functions 1
Supply Voltage 5V
Terminal Pitch 2.54mm
Pin Count 28
Operating Supply Voltage 5V
Power Supplies 5V
Temperature Grade MILITARY
Interface Parallel
Number of Ports 1
Memory Type RAM, SRAM - Asynchronous
Organization 8KX8
Output Characteristics 3-STATE
Address Bus Width 13b
Density 64 kb
Standby Current-Max 0.02A
Screening Level MIL-STD-883 Class B
Access Time (Max) 25 ns
I/O Type COMMON
Dimensions
Length 37.2mm
Width 15.24mm
Thickness 1.65mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Contains Lead
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