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Category Integrated Circuits (ICs) / Memory
Description Asynchronous Active J BEND 3-STATE (Memory Format) Memory 70C 5.5V 64kb 80mA
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No

Dimensions

Thickness 2.67mm
Width 7.6mm
Length 17.9mm
Height Seated (Max) 3.556mm

Technical

Standby Voltage-Min 2V
Word Size 8b
Sync/Async Asynchronous
I/O Type COMMON
Standby Current-Max 0.00006A
Density 64 kb
Address Bus Width 13b
Output Characteristics 3-STATE
Organization 8KX8
Access Time 25 ns
Memory Type RAM, SDR, SRAM - Asynchronous
Nominal Supply Current 80mA
Number of Ports 1
Memory Size 8kB
Min Supply Voltage 4.5V
Max Supply Voltage 5.5V
Interface Parallel
Temperature Grade COMMERCIAL
Power Supplies 5V
Operating Supply Voltage 5V
Pin Count 28
Supply Voltage 5V
Number of Functions 1
Peak Reflow Temperature (Cel) 260
Terminal Form J BEND
Terminal Position DUAL
Technology CMOS
Subcategory SRAMs
Min Operating Temperature 0°C
Max Operating Temperature 70°C
Terminal Finish Matte Tin (Sn) - annealed
ECCN Code EAR99
Number of Terminations 28
Moisture Sensitivity Level (MSL) 3
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2009

Physical

Number of Pins 28
Mount Surface Mount

Supply Chain

Factory Lead Time 7 Weeks

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