7164L20YG8
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Category Integrated Circuits (ICs) / Memory
Description
Asynchronous Active J BEND 3-STATE (Memory Format) Memory 70C 5.5V 64kb 90mA
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Technical Details
Supply Chain
Factory Lead Time 7 Weeks
Physical
Mount Surface Mount
Number of Pins 28
Technical
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3
Number of Terminations 28
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Subcategory SRAMs
Technology CMOS
Terminal Position DUAL
Terminal Form J BEND
Peak Reflow Temperature (Cel) 260
Number of Functions 1
Supply Voltage 5V
Pin Count 28
Operating Supply Voltage 5V
Power Supplies 5V
Temperature Grade COMMERCIAL
Interface Parallel
Max Supply Voltage 5.5V
Min Supply Voltage 4.5V
Memory Size 8kB
Number of Ports 1
Nominal Supply Current 90mA
Memory Type RAM, SDR, SRAM - Asynchronous
Access Time 20 ns
Organization 8KX8
Output Characteristics 3-STATE
Address Bus Width 13b
Density 64 kb
Standby Current-Max 0.00006A
I/O Type COMMON
Sync/Async Asynchronous
Word Size 8b
Standby Voltage-Min 2V
Dimensions
Height Seated (Max) 3.556mm
Length 17.9mm
Width 7.6mm
Thickness 2.67mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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