7140LA35CB
RoHS
/
Package DIP
Category Integrated Circuits (ICs) / Memory
Description
Asynchronous Active 3-STATE 2013 (Memory Format) Memory 125C 5.5V 8kb 170mA
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Technical Details
Physical
Mount Through Hole
Package / Case DIP
Number of Pins 48
Technical
Packaging Bulk
Published 2013
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1
Number of Terminations 48
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 125°C
Min Operating Temperature -55°C
Subcategory SRAMs
Technology CMOS
Terminal Position DUAL
Peak Reflow Temperature (Cel) 240
Number of Functions 1
Supply Voltage 5V
Pin Count 48
Operating Supply Voltage 5V
Power Supplies 5V
Temperature Grade MILITARY
Interface Parallel
Max Supply Voltage 5.5V
Min Supply Voltage 4.5V
Number of Ports 2
Nominal Supply Current 170mA
Memory Type RAM, SRAM
Access Time 35 ns
Organization 1KX8
Output Characteristics 3-STATE
Address Bus Width 10b
Density 8 kb
Standby Current-Max 0.004A
Screening Level MIL-PRF-38535
I/O Type COMMON
Sync/Async Asynchronous
Word Size 8b
Standby Voltage-Min 2V
Dimensions
Length 61.72mm
Width 15.24mm
Thickness 3.3mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Contains Lead
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