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Category Integrated Circuits (ICs) / Memory
Description Asynchronous Active FLAT 3-STATE (Memory Format) Memory 125C 5.5V 16kb 170mA
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Technical Details

Compliance

Lead Free Contains Lead
RoHS Status RoHS Compliant
Radiation Hardening No

Dimensions

Thickness 2.2mm
Width 19mm
Length 19mm

Technical

Standby Voltage-Min 2V
Word Size 8b
Sync/Async Asynchronous
I/O Type COMMON
Screening Level MIL-PRF-38535
Standby Current-Max 0.004A
Density 16 kb
Address Bus Width 11b
Output Characteristics 3-STATE
Access Time 35 ns
Memory Type RAM, SRAM
Nominal Supply Current 170mA
Number of Ports 2
Min Supply Voltage 4.5V
Max Supply Voltage 5.5V
Interface Parallel
Temperature Grade MILITARY
Power Supplies 5V
Operating Supply Voltage 5V
Pin Count 48
Supply Voltage 5V
Number of Functions 1
Peak Reflow Temperature (Cel) 240
Terminal Form FLAT
Terminal Position QUAD
Technology CMOS
Subcategory SRAMs
Additional Feature AUTOMATIC POWER-DOWN; BATTERY BACKUP
Min Operating Temperature -55°C
Max Operating Temperature 125°C
Terminal Finish Tin/Lead (Sn/Pb)
Number of Terminations 48
Moisture Sensitivity Level (MSL) 1
Part Status Active
Pbfree Code no
JESD-609 Code e0
Published 2010

Physical

Number of Pins 48
Mount Through Hole

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