71321LA35J
RoHS
/
Package PLCC
Category Integrated Circuits (ICs) / Memory
Description
Asynchronous Active J BEND 3-STATE (Memory Format) Memory 70C 5.5V 16kb 120mA
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Technical Details
Technical
JESD-609 Code e0
Published 2008
Standby Voltage-Min 2V
Word Size 8b
Sync/Async Asynchronous
I/O Type COMMON
Standby Current-Max 0.0015A
Density 16 kb
Address Bus Width 22b
Output Characteristics 3-STATE
Access Time 35 ns
Memory Type RAM, SDR, SRAM
Nominal Supply Current 120mA
Number of Ports 2
Memory Size 2kB
Min Supply Voltage 4.5V
Max Supply Voltage 5.5V
Interface Parallel
Temperature Grade COMMERCIAL
Power Supplies 5V
Operating Supply Voltage 5V
Pin Count 52
Supply Voltage 5V
Number of Functions 1
Peak Reflow Temperature (Cel) 225
Terminal Form J BEND
Terminal Position QUAD
Technology CMOS
Subcategory SRAMs
Additional Feature INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP
Min Operating Temperature 0°C
Max Operating Temperature 70°C
Terminal Finish Tin/Lead (Sn85Pb15)
ECCN Code EAR99
Number of Terminations 52
Moisture Sensitivity Level (MSL) 3
Part Status Active
Pbfree Code no
Physical
Number of Pins 52
Package / Case PLCC
Mount Surface Mount
Supply Chain
Factory Lead Time 7 Weeks
Compliance
Lead Free Contains Lead
RoHS Status RoHS Compliant
Radiation Hardening No
Dimensions
Thickness 3.63mm
Width 19mm
Length 19mm
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