71256L85DB
RoHS
/
Package CDIP
Category Integrated Circuits (ICs) / Memory
Description
Active THROUGH-HOLE 3-STATE 2011 (Memory Format) Memory 125C 5.5V 256kb 0.0005A
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status RoHS Compliant
Radiation Hardening No
Dimensions
Thickness 1.65mm
Width 15.24mm
Length 37.2mm
Height Seated (Max) 5.08mm
Technical
Standby Voltage-Min 2V
I/O Type COMMON
Screening Level MIL-STD-883 Class B
Standby Current-Max 0.0005A
Density 256 kb
Address Bus Width 15b
Output Characteristics 3-STATE
Organization 32KX8
Access Time 85 ns
Memory Type RAM, SDR, SRAM - Asynchronous
Number of Ports 1
Memory Size 32kB
Min Supply Voltage 4.5V
Max Supply Voltage 5.5V
Interface Parallel
Temperature Grade MILITARY
Power Supplies 5V
Operating Supply Voltage 5V
Pin Count 28
Terminal Pitch 2.54mm
Supply Voltage 5V
Number of Functions 1
Peak Reflow Temperature (Cel) 240
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Technology CMOS
Subcategory SRAMs
Min Operating Temperature -55°C
Max Operating Temperature 125°C
Terminal Finish Tin/Lead (Sn63Pb37)
Number of Terminations 28
Moisture Sensitivity Level (MSL) 1
Part Status Active
Pbfree Code no
JESD-609 Code e0
Published 2011
Packaging Bulk
Physical
Number of Pins 28
Surface Mount NO
Package / Case CDIP
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