71256L25TDB
RoHS
/
Package CDIP
Category Integrated Circuits (ICs) / Memory
Description
Asynchronous Active 3-STATE 2011 (Memory Format) Memory 125C 5.5V 256kb 130mA
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Technical Details
Physical
Mount Through Hole
Package / Case CDIP
Number of Pins 28
Technical
Packaging Bulk
Published 2011
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1
Number of Terminations 28
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 125°C
Min Operating Temperature -55°C
Subcategory SRAMs
Technology CMOS
Terminal Position DUAL
Peak Reflow Temperature (Cel) 240
Number of Functions 1
Supply Voltage 5V
Terminal Pitch 2.54mm
Pin Count 28
Operating Supply Voltage 5V
Power Supplies 5V
Temperature Grade MILITARY
Interface Parallel
Max Supply Voltage 5.5V
Min Supply Voltage 4.5V
Number of Ports 1
Nominal Supply Current 130mA
Memory Type RAM, SRAM - Asynchronous
Access Time 25 ns
Organization 32KX8
Output Characteristics 3-STATE
Address Bus Width 15b
Density 256 kb
Standby Current-Max 0.0005A
Screening Level MIL-STD-883 Class B
I/O Type COMMON
Sync/Async Asynchronous
Word Size 8b
Standby Voltage-Min 2V
Dimensions
Height Seated (Max) 5.08mm
Length 37.72mm
Width 7.62mm
Thickness 3.56mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Contains Lead
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