71124S20YG8
RoHS
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Package /
Category Integrated Circuits (ICs) / Memory
Description
Asynchronous Active J BEND 3-STATE (Memory Format) Memory 70C 5.5V 1Mb 140mA
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Inventory: 8913
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Dimensions
Thickness 2.2mm
Width 10.2mm
Length 20.9mm
Height Seated (Max) 3.683mm
Technical
Word Size 8b
Sync/Async Asynchronous
I/O Type COMMON
Density 1 Mb
Address Bus Width 17b
Output Characteristics 3-STATE
Access Time 20 ns
Memory Type RAM, SDR, SRAM - Asynchronous
Nominal Supply Current 140mA
Number of Ports 1
Memory Size 128kB
Min Supply Voltage 4.5V
Max Supply Voltage 5.5V
Interface Parallel
Temperature Grade COMMERCIAL
Power Supplies 5V
Operating Supply Voltage 5V
Pin Count 32
Supply Voltage 5V
Number of Functions 1
Peak Reflow Temperature (Cel) 260
Terminal Form J BEND
Terminal Position DUAL
Technology CMOS
Subcategory SRAMs
Min Operating Temperature 0°C
Max Operating Temperature 70°C
Terminal Finish Matte Tin (Sn) - annealed
Number of Terminations 32
Moisture Sensitivity Level (MSL) 3
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2009
Physical
Number of Pins 32
Mount Surface Mount
Supply Chain
Factory Lead Time 7 Weeks
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