70V659S10BF
RoHS
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Package /
Category Integrated Circuits (ICs) / Memory
Description
Asynchronous Active BALL 3-STATE (Memory Format) Memory 70C 3.45V 4.5Mb 500mA
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Buying Options
Total Price: USD $504.9
Unit Price: USD $504.903266
≥1 USD $504.903266
≥203 USD $201.460566
≥497 USD $194.728015
≥1001 USD $191.401127
Inventory: 1197
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 7 Weeks
Physical
Mount Surface Mount
Number of Pins 208
Technical
Published 2009
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 3
Number of Terminations 208
Terminal Finish Tin/Lead (Sn63Pb37)
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Subcategory SRAMs
Technology CMOS
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 225
Number of Functions 1
Supply Voltage 3.3V
Terminal Pitch 0.8mm
Time@Peak Reflow Temperature-Max (s) 20
Pin Count 208
Operating Supply Voltage 3.3V
Temperature Grade COMMERCIAL
Interface Parallel
Max Supply Voltage 3.45V
Min Supply Voltage 3.15V
Memory Size 512kB
Number of Ports 2
Nominal Supply Current 500mA
Memory Type RAM, SDR, SRAM
Access Time 10 ns
Output Characteristics 3-STATE
Address Bus Width 34b
Density 4.5 Mb
Standby Current-Max 0.015A
I/O Type COMMON
Sync/Async Asynchronous
Word Size 36b
Dimensions
Length 15mm
Width 15mm
Thickness 1.4mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Contains Lead
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