70V658S10BFG
RoHS
/
Package /
Category Integrated Circuits (ICs) / Memory
Description
Asynchronous Active BALL 3-STATE (Memory Format) Memory 70C 3.45V 2.3Mb 500mA
PDF
/
Buying Options
Total Price: USD $146.96
Unit Price: USD $146.960774
≥1 USD $146.960774
≥200 USD $56.872202
≥500 USD $54.873968
≥1000 USD $53.886668
Inventory: 1124
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 7 Weeks
Physical
Mount Surface Mount
Number of Pins 208
Technical
Published 2009
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3
Number of Terminations 208
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Subcategory SRAMs
Technology CMOS
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 260
Number of Functions 1
Supply Voltage 3.3V
Terminal Pitch 0.8mm
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 208
Operating Supply Voltage 3.3V
Temperature Grade COMMERCIAL
Interface Parallel
Max Supply Voltage 3.45V
Min Supply Voltage 3.15V
Memory Size 256kB
Number of Ports 2
Nominal Supply Current 500mA
Memory Type RAM, SDR, SRAM
Access Time 10 ns
Organization 64KX36
Output Characteristics 3-STATE
Address Bus Width 32b
Density 2.3 Mb
Standby Current-Max 0.015A
I/O Type COMMON
Sync/Async Asynchronous
Word Size 36b
Dimensions
Length 15mm
Width 15mm
Thickness 1.4mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Recommended For You
70V658S10BFG+price,70V658S10BFG+datasheet,70V658S10BFG+in stock,buy+70V658S10BFG,finder+70V658S10BFG,70V658S10BFG+tutorials,70V658S10BFG+download