70V657S10BCG
RoHS
/
Package /
Category Integrated Circuits (ICs) / Memory
Description
Asynchronous Active BALL 3-STATE (Memory Format) Memory 70C 3.45V 1.1Mb 500mA
PDF
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Buying Options
Total Price: USD $113.06
Unit Price: USD $113.060384
≥1 USD $113.060384
≥200 USD $43.753705
≥500 USD $42.2163
≥1000 USD $41.45613
Inventory: 1114
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Dimensions
Thickness 1.4mm
Width 17mm
Length 17mm
Height Seated (Max) 1.5mm
Technical
Word Size 36b
Sync/Async Asynchronous
I/O Type COMMON
Standby Current-Max 0.015A
Density 1.1 Mb
Address Bus Width 30b
Output Characteristics 3-STATE
Access Time 10 ns
Memory Type RAM, SDR, SRAM
Nominal Supply Current 500mA
Number of Ports 2
Memory Size 128kB
Min Supply Voltage 3.15V
Max Supply Voltage 3.45V
Interface Parallel
Temperature Grade COMMERCIAL
Operating Supply Voltage 3.3V
Pin Count 256
Time@Peak Reflow Temperature-Max (s) 30
Terminal Pitch 1mm
Supply Voltage 3.3V
Number of Functions 1
Peak Reflow Temperature (Cel) 260
Terminal Form BALL
Terminal Position BOTTOM
Technology CMOS
Subcategory SRAMs
Min Operating Temperature 0°C
Max Operating Temperature 70°C
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 256
Moisture Sensitivity Level (MSL) 3
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Published 2009
Physical
Number of Pins 256
Mount Surface Mount
Supply Chain
Factory Lead Time 7 Weeks
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