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Category Integrated Circuits (ICs) / Memory
Description Active BALL 3-STATE 2008 (Memory Format) Memory 70C 3.45V 576kb 0.015A
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Technical Details

Supply Chain

Factory Lead Time 7 Weeks

Physical

Surface Mount YES
Number of Pins 208

Technical

Published 2008
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 3
Number of Terminations 208
Terminal Finish Tin/Lead (Sn63Pb37)
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Additional Feature PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE
Subcategory SRAMs
Technology CMOS
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 225
Number of Functions 1
Supply Voltage 3.3V
Terminal Pitch 0.8mm
Time@Peak Reflow Temperature-Max (s) 20
Pin Count 208
Operating Supply Voltage 3.3V
Temperature Grade COMMERCIAL
Interface Parallel
Max Supply Voltage 3.45V
Min Supply Voltage 3.15V
I/O Type COMMON
Standby Current-Max 0.015A
Density 576 kb
Address Bus Width 28b
Output Characteristics 3-STATE
Organization 16KX36
Access Time 10 ns
Supply Current-Max 0.36mA
Clock Frequency 100MHz
Memory Type RAM, SDR, SRAM
Number of Ports 2
Memory Size 72kB

Compliance

Lead Free Contains Lead
RoHS Status RoHS Compliant
Radiation Hardening No

Dimensions

Thickness 1.4mm
Width 15mm
Length 15mm

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