70V3399S166BFG8
RoHS
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Package /
Category Integrated Circuits (ICs) / Memory
Description
BALL 3-STATE 2013 Parallel (Memory Format) Memory 70C 3.45V 2.3Mb 500mA
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Buying Options
Total Price: USD $148.72
Unit Price: USD $148.722686
≥1 USD $148.722686
≥200 USD $57.553597
≥500 USD $55.531731
≥1000 USD $54.532614
Inventory: 1143
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Surface Mount YES
Number of Pins 208
Technical
Packaging Tape & Reel
Published 2013
JESD-609 Code e1
Pbfree Code yes
Moisture Sensitivity Level (MSL) 3
Number of Terminations 208
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Additional Feature PIPELINED OR FLOW-THROUGH ARCHITECTURE
Subcategory SRAMs
Technology CMOS
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 260
Number of Functions 1
Supply Voltage 3.3V
Terminal Pitch 0.8mm
Frequency 166MHz
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 208
Operating Supply Voltage 3.3V
Temperature Grade COMMERCIAL
Interface Parallel
Max Supply Voltage 3.45V
Min Supply Voltage 3.15V
Memory Size 256kB
Number of Ports 2
Memory Type RAM, SDR, SRAM
Max Supply Current 500mA
Frequency (Max) 166MHz
Access Time 3.6 ns
Output Characteristics 3-STATE
Memory Width 18
Address Bus Width 34b
Density 2.3 Mb
Standby Current-Max 0.03A
I/O Type COMMON
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
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