70T659S12BCI8
RoHS
/
Package /
Category Integrated Circuits (ICs) / Memory
Description
Asynchronous Active BALL 3-STATE (Memory Format) Memory 85C 2.6V 4.5Mb 395mA
PDF
/
Buying Options
Total Price: USD $202.52
Unit Price: USD $202.524015
≥1 USD $202.524015
≥200 USD $78.374878
≥500 USD $75.620414
≥1000 USD $74.258937
Inventory: 1124
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 7 Weeks
Physical
Mount Surface Mount
Number of Pins 256
Technical
Packaging Tape & Reel
Published 2009
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 3
Number of Terminations 256
Terminal Finish Tin/Lead (Sn63Pb37)
Max Operating Temperature 85°C
Min Operating Temperature -40°C
Subcategory SRAMs
Technology CMOS
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 225
Number of Functions 1
Supply Voltage 2.5V
Terminal Pitch 1mm
Time@Peak Reflow Temperature-Max (s) 20
Pin Count 256
Operating Supply Voltage 2.5V
Temperature Grade INDUSTRIAL
Interface Parallel
Max Supply Voltage 2.6V
Min Supply Voltage 2.4V
Number of Ports 2
Nominal Supply Current 395mA
Memory Type RAM, SRAM
Access Time 12 ns
Output Characteristics 3-STATE
Address Bus Width 17b
Density 4.5 Mb
I/O Type COMMON
Sync/Async Asynchronous
Word Size 36b
Dimensions
Height Seated (Max) 1.5mm
Length 17mm
Width 17mm
Thickness 1.4mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Contains Lead
Recommended For You
70T659S12BCI8+price,70T659S12BCI8+datasheet,70T659S12BCI8+in stock,buy+70T659S12BCI8,finder+70T659S12BCI8,70T659S12BCI8+tutorials,70T659S12BCI8+download