70T651S12BF
RoHS
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Package /
Category Integrated Circuits (ICs) / Memory
Description
Asynchronous Active BALL 3-STATE (Memory Format) Memory 70C 2.6V 9Mb 355mA
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Buying Options
Total Price: USD $236.55
Unit Price: USD $236.550445
≥1 USD $236.550445
≥200 USD $91.541953
≥500 USD $88.325348
≥1000 USD $86.735426
Inventory: 1071
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 7 Weeks
Physical
Mount Surface Mount
Number of Pins 208
Technical
Packaging Bulk
Published 2005
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 3
Number of Terminations 208
Terminal Finish Tin/Lead (Sn63Pb37)
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Subcategory SRAMs
Technology CMOS
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 225
Number of Functions 1
Supply Voltage 2.5V
Terminal Pitch 0.8mm
Pin Count 208
Operating Supply Voltage 2.5V
Temperature Grade COMMERCIAL
Interface Parallel
Max Supply Voltage 2.6V
Min Supply Voltage 2.4V
Memory Size 1.1MB
Number of Ports 2
Nominal Supply Current 355mA
Memory Type RAM, SDR, SRAM
Access Time 12 ns
Output Characteristics 3-STATE
Address Bus Width 18b
Density 9 Mb
Standby Current-Max 0.01A
I/O Type COMMON
Sync/Async Asynchronous
Word Size 36b
Dimensions
Height Seated (Max) 1.5mm
Length 15mm
Width 15mm
Thickness 1.4mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Contains Lead
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