70T651S12BCI
RoHS
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Package /
Category Integrated Circuits (ICs) / Memory
Description
Asynchronous Active BALL 3-STATE (Memory Format) Memory 85C 2.6V 9Mb 395mA
PDF
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Buying Options
Total Price: USD $260.19
Unit Price: USD $260.186583
≥1 USD $260.186583
≥200 USD $100.688927
≥500 USD $97.150661
≥1000 USD $95.401879
Inventory: 1161
Minimum: 1
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status RoHS Compliant
Radiation Hardening No
Dimensions
Thickness 1.4mm
Width 17mm
Length 17mm
Height Seated (Max) 1.5mm
Technical
Word Size 36b
Sync/Async Asynchronous
I/O Type COMMON
Density 9 Mb
Address Bus Width 18b
Output Characteristics 3-STATE
Access Time 12 ns
Memory Type RAM, SDR, SRAM
Nominal Supply Current 395mA
Number of Ports 2
Memory Size 1.1MB
Min Supply Voltage 2.4V
Max Supply Voltage 2.6V
Interface Parallel
Temperature Grade INDUSTRIAL
Operating Supply Voltage 2.5V
Pin Count 256
Time@Peak Reflow Temperature-Max (s) 20
Terminal Pitch 1mm
Supply Voltage 2.5V
Number of Functions 1
Peak Reflow Temperature (Cel) 225
Terminal Form BALL
Terminal Position BOTTOM
Technology CMOS
Subcategory SRAMs
Min Operating Temperature -40°C
Max Operating Temperature 85°C
Terminal Finish Tin/Lead (Sn63Pb37)
Number of Terminations 256
Moisture Sensitivity Level (MSL) 3
Part Status Active
Pbfree Code no
JESD-609 Code e0
Published 2009
Packaging Bulk
Physical
Number of Pins 256
Mount Surface Mount
Supply Chain
Factory Lead Time 7 Weeks
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