70T651S10BC
RoHS
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Package /
Category Integrated Circuits (ICs) / Memory
Description
Asynchronous Active BALL 3-STATE (Memory Format) Memory 70C 2.6V 9Mb 405mA
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Buying Options
Total Price: USD $248.36
Unit Price: USD $248.361293
≥1 USD $248.361293
≥200 USD $96.112157
≥500 USD $92.735379
≥1000 USD $91.066683
Inventory: 1109
Minimum: 1
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Technical Details
Technical
Number of Ports 2
Nominal Supply Current 405mA
Memory Type RAM, SDR, SRAM
Access Time 10 ns
Output Characteristics 3-STATE
Address Bus Width 18b
Density 9 Mb
Standby Current-Max 0.01A
I/O Type COMMON
Sync/Async Asynchronous
Word Size 36b
Memory Size 1.1MB
Min Supply Voltage 2.4V
Max Supply Voltage 2.6V
Interface Parallel
Temperature Grade COMMERCIAL
Operating Supply Voltage 2.5V
Pin Count 256
Time@Peak Reflow Temperature-Max (s) 20
Terminal Pitch 1mm
Supply Voltage 2.5V
Number of Functions 1
Peak Reflow Temperature (Cel) 225
Terminal Form BALL
Terminal Position BOTTOM
Technology CMOS
Subcategory SRAMs
Min Operating Temperature 0°C
Max Operating Temperature 70°C
Terminal Finish Tin/Lead (Sn63Pb37)
Number of Terminations 256
Moisture Sensitivity Level (MSL) 3
Part Status Active
Pbfree Code no
JESD-609 Code e0
Published 2009
Packaging Bulk
Dimensions
Height Seated (Max) 1.5mm
Length 17mm
Width 17mm
Thickness 1.4mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Contains Lead
Physical
Number of Pins 256
Mount Surface Mount
Supply Chain
Factory Lead Time 7 Weeks
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