70T3519S200BCG
RoHS
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Package /
Category Integrated Circuits (ICs) / Memory
Description
Synchronous Active BALL 3-STATE (Memory Format) Memory 70C 2.6V 9Mb 525mA
PDF
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Buying Options
Total Price: USD $260.8
Unit Price: USD $260.801021
≥1 USD $260.801021
≥200 USD $100.926562
≥500 USD $97.380419
≥1000 USD $95.627697
Inventory: 1137
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 7 Weeks
Physical
Mount Surface Mount
Number of Pins 256
Technical
Published 2009
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3
Number of Terminations 256
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Additional Feature PIPELINED OR FLOW-THROUGH ARCHITECTURE
Subcategory SRAMs
Technology CMOS
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 260
Number of Functions 1
Supply Voltage 2.5V
Terminal Pitch 1mm
Frequency 200MHz
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 256
Operating Supply Voltage 2.5V
Temperature Grade COMMERCIAL
Interface Parallel
Max Supply Voltage 2.6V
Min Supply Voltage 2.4V
Memory Size 1.1MB
Number of Ports 2
Nominal Supply Current 525mA
Memory Type RAM, SDR, SRAM
Frequency (Max) 200MHz
Access Time 3.4 ns
Output Characteristics 3-STATE
Address Bus Width 36b
Density 9 Mb
Standby Current-Max 0.015A
I/O Type COMMON
Sync/Async Synchronous
Word Size 36b
Dimensions
Height Seated (Max) 1.7mm
Length 17mm
Width 17mm
Thickness 1.4mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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