70T3319S200BC
RoHS
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Package /
Category Integrated Circuits (ICs) / Memory
Description
Synchronous Active BALL 3-STATE (Memory Format) Memory 70C 2.6V 4Mb 525mA
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Buying Options
Total Price: USD $184.61
Unit Price: USD $184.612121
≥1 USD $184.612121
≥200 USD $71.442766
≥500 USD $68.932502
≥1000 USD $67.691811
Inventory: 1140
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 7 Weeks
Physical
Mount Surface Mount
Number of Pins 256
Technical
Packaging Bulk
Published 2010
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 3
Number of Terminations 256
Terminal Finish Tin/Lead (Sn63Pb37)
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Additional Feature FLOW-THROUGH OR PIPELINED ARCHITECTURE
Subcategory SRAMs
Technology CMOS
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 225
Number of Functions 1
Supply Voltage 2.5V
Terminal Pitch 1mm
Frequency 200MHz
Time@Peak Reflow Temperature-Max (s) 20
Pin Count 256
Operating Supply Voltage 2.5V
Temperature Grade COMMERCIAL
Interface Parallel
Max Supply Voltage 2.6V
Min Supply Voltage 2.4V
Memory Size 512kB
Number of Ports 2
Nominal Supply Current 525mA
Memory Type RAM, SDR, SRAM
Frequency (Max) 200MHz
Access Time 3.4 ns
Output Characteristics 3-STATE
Address Bus Width 18b
Density 4 Mb
Standby Current-Max 0.015A
I/O Type COMMON
Sync/Async Synchronous
Word Size 18b
Dimensions
Height Seated (Max) 1.5mm
Length 17mm
Width 17mm
Thickness 1.4mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Contains Lead
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