70P245L65BYGI8
RoHS
/
Package TFBGA
Category Integrated Circuits (ICs) / Memory
Description
BALL 3-STATE 2011 Parallel (Memory Format) Memory 85C 3V 64kb 0.000008A
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Inventory: 7116
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Technical Details
Compliance
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
I/O Type COMMON
Standby Current-Max 0.000008A
Density 64 kb
Address Bus Width 24b
Memory Width 16
Output Characteristics 3-STATE
Organization 4KX16
Access Time 65 ns
Supply Current-Max 0.07mA
Memory Type RAM, SDR, SRAM
Number of Ports 2
Memory Size 8kB
Min Supply Voltage 1.8V
Max Supply Voltage 3V
Interface Parallel
Temperature Grade INDUSTRIAL
Pin Count 100
Time@Peak Reflow Temperature-Max (s) 30
Terminal Pitch 0.5mm
Supply Voltage 1.8V
Number of Functions 1
Peak Reflow Temperature (Cel) 260
Terminal Form BALL
Terminal Position BOTTOM
Technology CMOS
Subcategory SRAMs
Min Operating Temperature -40°C
Max Operating Temperature 85°C
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 100
Moisture Sensitivity Level (MSL) 3
Pbfree Code yes
JESD-609 Code e1
Published 2011
Packaging Tape & Reel
Physical
Number of Pins 100
Surface Mount YES
Package / Case TFBGA
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