MB85R256GPF-G-BND-ERE1
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Category Integrated Circuits (ICs) / Memory
Description
Obsolete Non-Volatile Parallel FRAM ic memory -40C~85C TA 2.7V~3.6V 256Kb 32K x 8 150ns
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Technical Details
Technical
Operating Temperature -40°C~85°C TA
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology FRAM (Ferroelectric RAM)
Voltage - Supply 2.7V~3.6V
Memory Size 256Kb 32K x 8
Memory Type Non-Volatile
Memory Format FRAM
Memory Interface Parallel
Write Cycle Time - Word, Page 150ns
Alternative Model
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